Fermi energy above the conduction band minimum
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Fermi energy above the conduction band minimum
Deal all,
I am studying the oxidation and hydration of the Ga-polar and N-polar surfaces of GaN.
the results for the oxidation and hydration of N-polar GaN are fine (band-gap opening of the metallic surface, work function, fermi level, etc)
however, for the Ga-polar system, I am getting a fermi energy that is well above the conduction band minimum (VBM = -1.8 eV, CBM= -0.4 eV, and Ef = 3.33 eV), I am wondering if this calculation is correct/physically meaningful ?
for each study the other side of the slab is passivated with pseudo-hydrogen.
Thank you for your help,
I am studying the oxidation and hydration of the Ga-polar and N-polar surfaces of GaN.
the results for the oxidation and hydration of N-polar GaN are fine (band-gap opening of the metallic surface, work function, fermi level, etc)
however, for the Ga-polar system, I am getting a fermi energy that is well above the conduction band minimum (VBM = -1.8 eV, CBM= -0.4 eV, and Ef = 3.33 eV), I am wondering if this calculation is correct/physically meaningful ?
for each study the other side of the slab is passivated with pseudo-hydrogen.
Thank you for your help,
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- Global Moderator
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Re: Fermi energy above the conduction band minimum
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